Ordering number : EN6645D
3LP01C
P-Channel Small Signal MOSFET
–30V, –0.1A, 10.4 Ω , Single CP
Features
http://onsemi.com
?
?
?
Low ON-resistance
High-speed switching
2.5V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--30
±10
--0.1
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
--0.4
0.25
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
Device
Package
Shipping
memo
7013A-013
2.9
3
0.1
3LP01C-TB-E
3LP01C-TB-H
3LP01C-TB-E
3LP01C-TB-H
CP
SC-59,TO-236,
SOT-23,TO-236AB
CP
SC-59,TO-236,
SOT-23,TO-236AB
3,000
pcs./reel
3,000
pcs./reel
Pb-Free
Pb-Free
and
Halogen Free
1
0.95
2
0.4
Packing Type: TL
Marking
1 : Gate
2 : Source
3 : Drain
CP
TB
Electrical Connection
XA
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
62613 TKIM TC-00002944/62712 TKIM/32509 MSIM TC-00001903/72606/ No.6645-1/6
33006PE MSIM TB-00002203/90100 TSIM TA-1982
相关PDF资料
3LP01M-TL-H MOSFET P-CH 30V 100MA MCP
3LP01SS-TL-H MOSFET P-CH 30V 400MA SMCP
4010-KFOBDEV-434 KIT DEV SI4010 SI4355 RX 434MHZ
4021-CW 4021 ELARA MOON MODULE WHT
404R5KL1.0 POSITION SENSOR LIN 5K OHM
4140-00 EVAL KIT FOR 4140
4141-00 EVAL KIT FOR 4141
420680260-3 CABLE OSD 6" 150MM
相关代理商/技术参数
3LP01M 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET
3LP01M_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
3LP01M-TL-E 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
3LP01M-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
3LP01M-TL-HX 制造商:ON Semiconductor 功能描述:MOSF P CH 30V 100MA MCP
3LP01N 制造商:未知厂家 制造商全称:未知厂家 功能描述:
3LP01S 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
3LP01S_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications